Defect clustering and self-healing of electron-irradiated boron-rich solids

Journal Article · Mon May 01 04:00:00 EDT 1995 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.51.11270· OSTI ID:44519

Carrard, M ^[1]; Emin, D ^[2]; Zuppiroli, L ^[1]

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1. Laboratoire de Physique des Solides Semi-cristallins, Institut de Genie Atomique, Ecole Polytechnique Federale, CH 1015 Lausanne (Switzerland)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States)

Transmission-electron-microscopy observations are used to evaluate damage produced by irradiating boron-rich metals, semimetals, and semiconductors of three different structure types with energetic electrons. The propensity for damage increases with decreasing carrier concentration except for borides based on twelve-atom icosahedral units. In these semiconducting icosahedral borides neither defect clusters nor amorphorization were observed. In accord with studies of other icosahedral borides, we conclude that radiation-induced boron vacancies and interstitials self-heal in icosahedral borides. We explain this self-healing as having its origin in the unusual structural and electronic stability of fragments of boron-rich icosahedra, termed degraded icosahedra.

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 44519
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 17 Vol. 51; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON COMPOUNDS
CARRIER DENSITY
ELECTRON MICROSCOPY
RADIATION EFFECTS
SOLIDS