Association of broad icosahedral Raman bands with substitutional disorder in SiB{sub 3} and boron carbide
Journal Article
·
· Physical Review, B: Condensed Matter
- Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States)
The structure of silicon boride, SiB{sub 3}, is based on 12-atom, boron-rich icosahedra in which silicon atoms substitute for some boron atoms. Raman bands associated with vibrations of icosahedral atoms in SiB{sub 3} are quite broad, reflecting this substitutional disorder. Comparing the Raman spectra of other icosahedral borides with SiB{sub 3}, only boron carbides have similarly broad icosahedral Raman bands. The direct correlation of broad icosahedral Raman bands with substitutional disorder supports the proposition that carbon atoms replace icosahedral boron atoms in boron carbides of all compositions. {copyright} {ital 1998} {ital The American Physical Society}
- OSTI ID:
- 573972
- Journal Information:
- Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 5 Vol. 57; ISSN 0163-1829; ISSN PRBMDO
- Country of Publication:
- United States
- Language:
- English
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