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Avalanche semiconductor negatrons and their application (review)

Journal Article · · Instrum. Exp. Tech. (USSR) (Engl. Transl.), v. 16, no. 3, pp. 665- 679
OSTI ID:4422594
Translated from Prib. Tekh. Eksp.; 16: No. 3, 7-20(1973). New types of avalanche transistor negatrons and their fields of application are described. The advantages of negatrons over known types of active devices are demonstrated in terms of speed of response, simplicity, and multifunctionality of the circuits, ease of controlling the shape and parameters of the voltampere characteristics, the possibility of realization in integrated implementation, etc. A large nurmber of negatron circuits are presented. (93 references.) (auth)
Research Organization:
Moscow Power Inst.
NSA Number:
NSA-29-002809
OSTI ID:
4422594
Journal Information:
Instrum. Exp. Tech. (USSR) (Engl. Transl.), v. 16, no. 3, pp. 665- 679, Journal Name: Instrum. Exp. Tech. (USSR) (Engl. Transl.), v. 16, no. 3, pp. 665- 679; ISSN INETA
Country of Publication:
Country unknown/Code not available
Language:
English

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