Characterization of sputtered tin oxide thin-films for gas sensing applications
Conference
·
OSTI ID:441322
- Hong Kong Univ. of Science and Technology, Clear Water Bay (Hong Kong); and others
Various techniques can be used to prepare tin oxide thin-films but radio-frequency reactive sputtering is the easiest way to fabricate silicon-based integrated gas sensors. Properties such as atomic concentrations, chemical states, and depth profile of tin and oxygen in the films can strongly influence their electrical characteristics. This is the reason such films can be used in many different kinds of gas sensors. It is, therefore, necessary to systematically study these thin films under different sputtering conditions. This paper describes the results from such a study.
- OSTI ID:
- 441322
- Report Number(s):
- CONF-960782--
- Country of Publication:
- United States
- Language:
- English
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