Effect of growth parameters on the electrical properties and crystal structure of heteroepitaxial silicon on spinel and sapphire. Technical report EE-207(73)SAN-254
Technical Report
·
OSTI ID:4383432
S>For Sandia Corp.
- Research Organization:
- New Mexico Univ., Albuquerque (USA). Bureau of Engineering Research
- DOE Contract Number:
- 51-3475-I
- NSA Number:
- NSA-29-012481
- OSTI ID:
- 4383432
- Report Number(s):
- SLA-73-890
- Resource Relation:
- Other Information: For Sandia Corp. Orig. Receipt Date: 30-JUN-74
- Country of Publication:
- United States
- Language:
- English
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