Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Solid-state ionization chamber for the high-dose-rate measurement of gamma rays

Journal Article · · Int. J. Appl. Radiat. Isotop., v. 24, no. 11, pp. 627-637
OSTI ID:4367493
A radiation damage-resistant gamma -dose-rate meter in the form of an N/ P-type silicon solar cell was investigated as a solid-state analogue of a gaseous ionization chamber. The ionization current was found to be a linear function of exposure rate in the range of 10/sup 2/ ~ 10/sup 6/ R/hr. The sensitivity of the Cu-doped cell, with a bulk resistivity of 200 OMEGA -cm, is the most stable, and the sensitivity degradation rate is only about 0.1% 10/sup 6/ R. The sensitivity can also be stabilized to some degree by pre-irradiation. The temperature dependence in various cells was found to be less than 0.4%/ deg C between 5 deg ~ 60 deg C. The non-directional dependence of the dosimeter probe was established to an accuracy of about plus or minus 1%. (auth)
Research Organization:
Japan Atomic Energy Research Inst., Takashi
NSA Number:
NSA-29-007792
OSTI ID:
4367493
Journal Information:
Int. J. Appl. Radiat. Isotop., v. 24, no. 11, pp. 627-637, Journal Name: Int. J. Appl. Radiat. Isotop., v. 24, no. 11, pp. 627-637; ISSN IJARA
Country of Publication:
United Kingdom
Language:
English