Si{sub 3}N{sub 4}/Si/In{sub 0.05}Ga{sub 0.95}As/n{endash}GaAs metal{endash}insulator{endash}semiconductor devices
- Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801 (United States)
We report a novel metal{endash}insulator{endash}semiconductor (MIS) structure exhibiting a pseudomorphic In{sub 0.05}Ga{sub 0.95}As layer on GaAs with interface state densities in the low 10{sup 11} eV{sup {minus}1}cm{sup {minus}2}. The structure was grown by a combination of molecular beam epitaxy and chemical vapor deposition methods. The hysteresis and frequency dispersion of the MIS capacitor were lower than 100 mV, some of them as low as 30 mV under a field swing of about {plus_minus}1.3 MV/cm. The 150-{Angstrom}-thick In{sub 0.05}Ga{sub 0.95}As channel between Si and GaAs is found to bring about a change in the minority carrier recombination behavior of the GaAs channel, in the same way as done by In{sub 0.53}Ga{sub 0.47}As channel MIS structures. Self-aligned gate depletion mode In{sub 0.05}Ga{sub 0.95}As metal{endash}insulator{endash}semiconductor field-effect transistors having 3 {mu}m gate lengths exhibited field-effect bulk mobility of 1400 cm{sup 2}/Vs and transconductances of about 170 mS/mm. {copyright} {ital 1997 American Institute of Physics.}
- Research Organization:
- Univ. of Illinois at Urbana-Champaign, IL (United States)
- DOE Contract Number:
- FG02-91ER45439
- OSTI ID:
- 436402
- Journal Information:
- Journal of Applied Physics, Vol. 81, Issue 1; Other Information: PBD: Jan 1997
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
SEMICONDUCTOR DEVICES
FIELD EFFECT TRANSISTORS
INDIUM ARSENIDES
ELECTRIC CONDUCTIVITY
GALLIUM ARSENIDES
SILICON NITRIDES
SILICON COMPOUNDS
SILICON
INDIUM COMPOUNDS
HYSTERESIS
CARRIER MOBILITY
CHEMICAL VAPOR DEPOSITION
MOLECULAR BEAM EPITAXY
elemental semiconductors
MIS capacitors
MISFET
interface states
minority carriers
surface recombination