Modeling of etch profile evolution including wafer charging effects using self consistent ion fluxes
- Univ. of Illinois, Urbana, IL (United States). Dept. of Electrical and Computer Engineering
As high density plasma reactors become more predominate in industry, the need has intensified for computer aided design tools which address both equipment issues such as ion flux uniformity onto the water and process issues such etch feature profile evolution. A hierarchy of models has been developed to address these issues with the goal of producing a comprehensive plasma processing design capability. The Hybrid Plasma Equipment Model (HPEM) produces ion and neutral densities, and electric fields in the reactor. The Plasma Chemistry Monte Carlo Model (PCMC) determines the angular and energy distributions of ion and neutral fluxes to the wafer using species source functions, time dependent bulk electric fields, and sheath potentials from the HPEM. These fluxes are then used by the Monte Carlo Feature Profile Model (MCFP) to determine the time evolution of etch feature profiles. Using this hierarchy, the effects of physical modifications of the reactor, such as changing wafer clamps or electrode structures, on etch profiles can be evaluated. The effects of wafer charging on feature evolution are examined by calculating the fields produced by the charge deposited by ions and electrons within the features. The effect of radial variations and nonuniformity in angular and energy distribution of the reactive fluxes on feature profiles and feature charging will be discussed for p-Si etching in inductively-coupled plasma (ICP) sustained in chlorine gas mixtures. The effects of over- and under-wafer topography on etch profiles will also be discussed.
- Sponsoring Organization:
- National Science Foundation, Washington, DC (United States)
- OSTI ID:
- 435493
- Report Number(s):
- CONF-960634--
- Country of Publication:
- United States
- Language:
- English
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