Modeling of 2-dimensional and 3-dimensional etch profiles in high density plasma reactors
Conference
·
OSTI ID:323619
- Univ. of Illinois, Urbana, IL (United States). Dept. of Electrical and Computer Engineering
- LSI Logic Corp., Santa Clara, CA (United States)
In order to model the plasma etching process from plasma generation to etch profile evolution, processes from the macroscopic reactor scale to the microscopic feature scale must be simulated. An integrated monte Carlo feature Profile Model (MCFPM) has been developed to examine the time evolution of etch profiles in high density plasma systems. By integrating the MCFPM with the Hybrid Plasma Equipment Model (HPEM), the authors are able to self-consistently determine the etch profiles for specific regions on the wafer in specific reactor geometry with specified parameters for power, chemistry, gas flow, etc. The latest improvements of the model include the effects of incoming particle angle and energy on reaction and reflection based on the results of molecular dynamics simulations. Increase the specular reflection of high energy particles leads to more vertical sidewalls and corner clearing but can also cause deformation of the bottom of the profile surface. For Chlorine etching of 2D and 3D profiles in polysilicon, the model results will be compared to experimental results in an inductively couple etching reactor. The changes due to radial location as well as sub wafer and superwafer topography be examined.
- Sponsoring Organization:
- National Science Foundation, Washington, DC (United States)
- OSTI ID:
- 323619
- Report Number(s):
- CONF-970559--
- Country of Publication:
- United States
- Language:
- English
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Mon Jul 01 00:00:00 EDT 1996
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
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OSTI ID:286574