Overdoped regime of the high-{ital T}{sub {ital c}} superconductor HgBa{sub 2}CuO{sub 4+{delta}} and the relation between normal and superconducting carrier densities
- Superconductivity Research Laboratory, International Superconductivity Technology Center, 10-13 Shinonome 1-chome, Koto-ku, Tokyo 135 (Japan)
We have determined the {ital ab}-plane and {ital c}-axis components of penetration depth, {lambda}{sub {ital ab}} and {lambda}{sub {ital c}}, and coherence length, {xi}{sub {ital ab}} and {xi}{sub {ital c}}, for optimally doped ({ital T}{sub {ital c}}=96 K) and overdoped HgBa{sub 2}CuO{sub 4+{delta}} ({ital T}{sub {ital c}}=52 K). {xi}{sub {ital ab}}, {xi}{sub {ital c}}, and {lambda}{sub {ital ab}} increase, whereas {lambda}{sub {ital c}} decreases for the overdoped material in comparison to the optimally doped materials. Analysis of the data reveals that the increase of {lambda}{sub {ital ab}} is caused by a suppression of the superconducting carrier density {ital n}{sub {ital s}}, and not an enhancement of the in-plane effective mass. The decrease of {lambda}{sub {ital c}} originates from an overcompensation in the suppression of {ital n}{sub {ital s}} by a strongly reduced effective mass along the {ital c} axis. {copyright} {ital 1996 The American Physical Society.}
- OSTI ID:
- 434501
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 53, Issue 1; Other Information: PBD: Jan 1996
- Country of Publication:
- United States
- Language:
- English
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