Variation of the in-plane penetration depth {lambda}{sub {ital ab}} as a function of doping in La{sub 2{minus}{ital x}}Sr{sub {ital x}}CuO{sub 4{plus_minus}{delta}} thin films on SrTiO{sub 3}: Implications for the overdoped state
- IBM Research Division, Zurich Research Laboratory, 8803 Rueschlikon (Switzerland)
- IBM Research Division, Zurich Research Laboratory, 8803 Rueschlikon, Switzerl
- Departement de Physique de la Matiere Condensee, Universite de Geneve, 1211 Geneve (Switzerland)
- Institut de Physique, Universite de Neuchatel, 2000 Neuchatel (Switzerland)
Normal-state properties, such as the resistivity {rho}{sub {ital ab}} and the Hall coefficient {ital R}{sub {ital H}}, structural properties, such as the {ital c} axis and in-plane lattice parameters, and superconductive properties, such as the critical temperature {ital T}{sub {ital c}}, the penetration depth {lambda}{sub {ital ab}}, and the thermal activation energy for flux flow {Delta}{ital U}, are reported for {ital c}-axis La{sub 2{minus}{ital x}}Sr{sub {ital x}}CuO{sub 4{plus_minus}{delta}} films. These parameters have been measured as a function of doping in the range from heavily underdoped to heavily overdoped. The structural data indicate a 0.3{percent} compression of the {ital c}-axis parameter and a corresponding 0.3{percent} expansion of the in-plane lattice parameters as compared to bulk values, which explains the overall reduced critical temperature of these thin films. As the dopant content is increased, maximum values for {ital T}{sub {ital c}}, {Delta}{ital U}, and {lambda}{sub {ital ab}}{sup {minus}1} are observed close to optimum doping, while {ital R}{sub {ital H}} and {rho}{sub {ital ab}} decrease monotonically. {copyright} {ital 1996 The American Physical Society.}
- OSTI ID:
- 388949
- Journal Information:
- Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 10 Vol. 54; ISSN 0163-1829; ISSN PRBMDO
- Country of Publication:
- United States
- Language:
- English
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