Verification of three dimensional charge transport simulations using ion microbeams

Conference · Mon Dec 30 23:00:00 EST 1996

OSTI ID:434339

Horn, K M; Dodd, P E ^[1]; Breese, M B.H. ^[2]; Doyle, B L ^[1]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. Oxford Univ. (United Kingdom). Dept. of Physics

Optically targeted, ion microbeams provide a useful means of exposing individual structures within an integrated circuit to ionizing radiation. With this tool, calibrated, low damage, charge collection spectra can be measured from specific circuit structures without preceding ion damage to the structure or surrounding circuitry. This paper presents comparisons of calibrated, low damage, ion microbeam- based charge collection measurements and three-dimensional, charge transport simulations of charge collection for isolated n- and p- channel field effect transistors under conducting and non-conducting bias conditions.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 434339
• Report Number(s): SAND--96-2837C; CONF-961120--1; ON: DE97000924
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
CHARGE COLLECTION
CHARGE TRANSPORT
COMPUTERIZED SIMULATION
FIELD EFFECT TRANSISTORS
INTEGRATED CIRCUITS
ION BEAMS
IONIZING RADIATIONS
IRRADIATION
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SILICON
TESTING
THREE-DIMENSIONAL CALCULATIONS