Microbeam studies of single-event effects
- Sandia National Lab., Albuquerque, NM (United States)
The application of heavy-ion microbeam systems to the study of single-event effects is reviewed. Apertured microbeam systems have been used since the early 1980`s to study charge collection. This has led to the development of the present models for the transport of charge following heavy-ion strikes in semiconductors. More recently, magnetically focused scanned microbeams have allowed direct imaging of charge collection regions with a technique called IBICC (ion-beam induced charge collection). Charge collection depth can be extracted from the pulse height spectrum from well-defined regions of the IC. When applied to single event upset, those regions sensitive to upset have been directly mapped with scanned microbeam systems. Damage effects due to total-ionizing dose and displacement damage are discussed. These techniques have removed uncertainty associated with broad-beam techniques, and improved understanding of the mechanisms responsible for single-event effects in IC`s.
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 242446
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 2 Vol. 43; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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