The mechanism of sputter-induced orientation change in YBCO films on MgO (001)

Technical Report · Sun Dec 01 04:00:00 EST 1996

DOI:https://doi.org/10.2172/432993· OSTI ID:432993

Huang, Y; Vuchic, B V; Baldo, P; Merkle, K L ^[1]; Buchholz, D B; Mahajan, S; Lei, J S; Markworth, P R; Chang, R P.H. ^[2]

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1. Argonne National Lab., IL (United States). Materials Science Div.
2. Northwestern Univ., Evanston, IL (United States). Dept. of Material Science and Engineering

The mechanisms of the sputter-induced orientation change in YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}(YBCO) films grown on MgO (001) substrates by pulsed organometallic beam epitaxy (POMBE) are investigated by x-ray diffraction. Rutherford backscatter spectroscopy (RBS), cross-section TEM (XTEM) and microanalysis. It is found that the W atom implantation concurring with the ion sputtering plays an important role in effecting the orientation change. This implantation changes the surface structure of the substrate and induces an intermediate layer in the initial growth of the YBCO film, which in turn acts as a template that induces the orientation change. It seems that the surface morphology change caused by ion sputtering has only a minor effect on the orientation change.

• Research Organization: Argonne National Lab., IL (United States)
• Sponsoring Organization: USDOE Office of Energy Research, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 432993
• Report Number(s): ANL/MSD/CP--91913; CONF-961202--58; ON: DE97001992; CNN: Contract DMR 91-20000
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM OXIDES
COPPER OXIDES
EXPERIMENTAL DATA
HIGH-TC SUPERCONDUCTORS
MAGNESIUM OXIDES
MOLECULAR BEAM EPITAXY
MORPHOLOGICAL CHANGES
SPUTTERING
TUNGSTEN
YTTRIUM OXIDES