Interfacial strain reliefs in epitaxial YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} thin films grown on SrTiO{sub 3} buffered MgO substrates

Book · Thu Dec 31 04:00:00 EST 1998

OSTI ID:305543

Cui, X; Chen, Q Y; Chu, W K ^[1]; Guo, Y ^[2]

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1. Univ. of Houston, TX (United States)
2. Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Earth and Planetary Sciences

High quality YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} (YBCO) epitaxial thin films grown on MgO substrate with a strain-relieved SrTiO{sub 3} (STO) buffer layer have been investigated by Rutherford backscattering spectrometry (RBS), ion channeling and high resolution cross sectional transmission electron microscopy (XTEM). The in-situ growth of STO buffer layer along with the YBCO films was carried out by a pulsed laser ablation. In this work, minimum yield of channeling measurements have shown that a very thin STO buffer layer is sufficient to grow highly crystalline YBCO thin films on MgO substrates. TEM studies showed that the STO layers were strain-relieved by an array of periodic edge dislocations. The YBCO films on STO buffer, as in those grown directly on an STO substrate, evolved from a strained layer to a largely dislocation free area.

• OSTI ID: 305543
• Report Number(s): CONF-971201--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM OXIDES
COPPER OXIDES
CRYSTAL GROWTH
DISLOCATIONS
EPITAXY
EXPERIMENTAL DATA
HIGH-TC SUPERCONDUCTORS
INTERFACES
STRESS RELAXATION
SUBSTRATES
THIN FILMS
YTTRIUM OXIDES