Interfacial strain reliefs in epitaxial YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} thin films grown on SrTiO{sub 3} buffered MgO substrates
- Univ. of Houston, TX (United States)
- Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Earth and Planetary Sciences
High quality YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} (YBCO) epitaxial thin films grown on MgO substrate with a strain-relieved SrTiO{sub 3} (STO) buffer layer have been investigated by Rutherford backscattering spectrometry (RBS), ion channeling and high resolution cross sectional transmission electron microscopy (XTEM). The in-situ growth of STO buffer layer along with the YBCO films was carried out by a pulsed laser ablation. In this work, minimum yield of channeling measurements have shown that a very thin STO buffer layer is sufficient to grow highly crystalline YBCO thin films on MgO substrates. TEM studies showed that the STO layers were strain-relieved by an array of periodic edge dislocations. The YBCO films on STO buffer, as in those grown directly on an STO substrate, evolved from a strained layer to a largely dislocation free area.
- OSTI ID:
- 305543
- Report Number(s):
- CONF-971201--
- Country of Publication:
- United States
- Language:
- English
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