X-ray analysis of strain distribution in two-step grown epitaxial SrTiO{sub 3} thin films
- Department of Materials, Physics and Energy Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
- Materials and Surface Engineering Research Institute, Kanto Gakuin University, Kanazawa-ku, Yokohama 236-0004 (Japan)
Epitaxial SrTiO{sub 3} (STO) thin films were grown on (001)-oriented LaAlO{sub 3} (LAO) substrates using a two-step growth method by ion beam sputter deposition. An STO buffer layer was initially grown on the LAO substrate at a low temperature of 150 °C prior to growing the STO main layer at 750 °C. The thickness of the STO buffer layer was varied at 3, 6, and 10 nm, while the total film thickness was kept constant at approximately 110 nm. According to x-ray structural analysis, we show that the STO buffer layer plays an essential role in controlling the strain in the STO layer grown subsequently. It is found that the strains in the STO films are more relaxed with an increase in buffer layer thickness. Moreover, the strain distribution in two-step grown STO films becomes more homogeneous across the film thickness when compared to that in directly grown STO film.
- OSTI ID:
- 22314485
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 105; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Nanometer-Scale Epitaxial Strain Release in Perovskite Heterostructures Using 'SrAlOx' Sliding Buffer Layers
Epitaxial growth and characterization of Eu{sub 0.5}Sr{sub 0.5}CoO{sub 3} thin films by off-axis sputtering