Ion implantation and annealing studies in III-V nitrides
- Sandia National Labs., Albuquerque, NM (United States)
- Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
- Australian National Univ., Canberra (Australia). Dept. of Electronic Materials Engineering
- Emcore Corp., Somerset, NJ (United States)
Ion implantation doping and isolation is expected to play an enabling role for the realization of advanced III-Nitride based devices. In fact, implantation has already been used to demonstrate n- and p-type doping of GaN with Si and Mg or Ca, respectively, as well as to fabricate the first GaN junction field effect transistor. Although these initial implantation studies demonstrated the feasibility of this technique for the III-Nitride materials, further work is needed to realize its full potential. After reviewing some of the initial studies in this field, the authors present new results for improved annealing sequences and defect studies in GaN. First, sputtered AlN is shown by electrical characterization of Schottky and Ohmic contacts to be an effect encapsulant of GaN during the 1,100 C implant activation anneal. The AlN suppresses N-loss from the GaN surface and the formation of a degenerate n{sup +}-surface region that would prohibit Schottky barrier formation after the implant activation anneal. Second, they examine the nature of the defect generation and annealing sequence following implantation using both Rutherford Backscattering (RBS) and Hall characterization. They show that for a Si-dose of 1 x 10{sup 16} cm{sup {minus}2} 50% electrical donor activation is achieved despite a significant amount of residual implantation-induced damage in the material.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States); Office of Naval Research, Washington, DC (United States); Defense Advanced Research Projects Agency, Arlington, VA (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 432983
- Report Number(s):
- SAND-96-2936C; CONF-961202-48; ON: DE97001935; CNN: NSF Grant DMR-9421109; ONR Grant N00012-92-5-1895; TRN: 98:008279
- Resource Relation:
- Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: [1996]
- Country of Publication:
- United States
- Language:
- English
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