Transient photocurrents in SOS structures
Conference
·
· IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., v. NS-20, no. 6, pp. 315-318
OSTI ID:4326167
Silicon-on-Sapphire (SOS) construction reduces junction photocurrents to such low levels that other radiation-induced currents tend to dominate the response of an SOS circuit to transient ionizing radiation. The results of experiments and calculations suggest that photoconduction of the sapphire substrate accounts for most of the observed excess'' currents internal to these circuits while gas ionization effects are significant at the external device terminals. ( auth)
- Research Organization:
- Rockwell International, Anaheim, CA
- NSA Number:
- NSA-29-029582
- OSTI ID:
- 4326167
- Journal Information:
- IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., v. NS-20, no. 6, pp. 315-318, Journal Name: IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., v. NS-20, no. 6, pp. 315-318; ISSN IETNA
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
Similar Records
CMOS/SOS NAND gate sapphire photocurrrent compensation
Minimal photocurrent analog multiplexer using edge-on diodes
Transient response of epitaxial GaAs JFET structures to ionizing radiation
Conference
·
Sun Nov 30 23:00:00 EST 1975
· IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2617-2620
·
OSTI ID:4094717
Minimal photocurrent analog multiplexer using edge-on diodes
Conference
·
Fri Nov 30 23:00:00 EST 1973
· IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., v. NS-20, no. 6, pp. 185-189
·
OSTI ID:4325999
Transient response of epitaxial GaAs JFET structures to ionizing radiation
Conference
·
Fri Nov 30 23:00:00 EST 1973
· IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., v. NS-20, no. 6, pp. 171-179
·
OSTI ID:4312775