Ferroelectric properties of (Pb{sub 0.97}La{sub 0.03})(Zr{sub 0.66}Ti{sub 0.34}){sub 0.9875}O{sub 3} films deposited on Si{sub 3}N{sub 4}-coated Si substrates by pulsed laser deposition process

Journal Article · Wed Jan 01 04:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119300· OSTI ID:432488

Tseng, T; Yang, R; Liu, K ^[1]; Lin, I ^[2]

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1. Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 300, Taiwan, Republic of (China)
2. Materials Science Center, National Tsing-Hua University, Hsinchu, 300, Taiwan, Republic of (China)

(Pb{sub 0.97}La{sub 0.03})(Zr{sub 0.66}Ti{sub 0.34}){sub 0.9875}O{sub 3}, PLZT, thin films deposited on either LaNiO{sub 3} (LNO) or LNO/Pt coated Si{sub 3}N{sub 4}/Si substrates, possessing good ferroelectric properties, were successfully obtained by the pulsed laser deposition process. Using LNO/Pt as double layer electrodes not only resulted in PLZT films with superior electric properties, but also of better handling endurance. The former is attributed to the low surface resistivity of electrode materials (i.e., {rho}{sub LNO/Pt}=0.5 m{Omega}cm) due to the bypassing effect of the Pt layer, whereas the latter is ascribed to the induction of compressive stress on PLZT and LNO layers due to a relatively larger thermal expansion coefficient (CTE) of the Pt layer. The ferroelectric properties of (PLZT){sub LNO/pt} films were P{sub r}=16.5 {mu}C/cm{sup 2} and E{sub c}=63.5 kV/cm, while the dielectric constant and leakage current were K=1.028 and J{sub e}{le}8{times}10{sup {minus}6} A/cm{sup 2} (under 150 kV/cm), respectively. Their fatigue life was longer than 2{times}10{sup 9}cycles under action of 300 kV/cm pulse. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 432488
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABLATION
DEPOSITION
DIELECTRIC PROPERTIES
FERROELECTRIC MATERIALS
LASER RADIATION
LEAD COMPOUNDS
LEAKAGE CURRENT
PZT
STRESSES
THIN FILMS