Research on microwave joining of SiC
- FM Technologies, Inc., Fairfax Station, VA (United States)
Results: identification of optimum joining temperature range for reaction bonded Si carbide at 1420-1500 C; demonstration that specimens joined within this range have fracture roughness greater than as-received material; and demonstration of ability to use SiC formed in situ from the decomposition of polycarbosilane as a joining aid for sintered Si carbide. In the latter case, the interlayer material was also shown to fill any pores in the joining specimens near the interlayer. Together with the demonstration of leaktight joints between tube sections of reaction bonded and sintered SiC under the previous contract, these results provide the foundation for scaleup to joining of the larger and longer tubes needed for radiant burner and heat exchanger tube assemblies. The formation of SiC in situ is important because maintaining roundness of these large tubes is a technical challenge for the tube manufacturer, so that formation of a leaktight joint may require some degree of gap filling.
- Research Organization:
- Los Alamos National Lab., NM (United States); FM Technologies, Inc., Fairfax Station, VA (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Energy Efficiency and Renewable Energy, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 432457
- Report Number(s):
- LA-SUB--95-192-Pt.1; ON: DE97002600
- Country of Publication:
- United States
- Language:
- English
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