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Joining of SiC ceramics and SiC/SiC composites

Conference ·
OSTI ID:140110
;  [1]
  1. Idaho National Engineering Lab., Idaho Falls, ID (United States)
Reaction processing methods have been employed to fabricate SiC-to-SiC joints for potential use in elevated temperature applications. The processing method involves tape casting thin sheet SiC+C interlayer precursors, clamping the tape between the SiC parts, and infiltrating the joint with molten Si to form a reaction bonded silicon carbide (RBSC) interlayer. Four-point bending strength and fracture toughness have been evaluated at room and elevated temperatures for joined pressureless sintered {alpha}-SiC test specimens. At low temperatures the joint mechanical properties were comparable to those reported in the literature for bulk SiC, while at elevated temperatures the joint behavior was controlled by the properties of the RBSC interlayer.
Research Organization:
Oak Ridge National Lab., TN (United States)
OSTI ID:
140110
Report Number(s):
ORNL/FMP--93/1; CONF-9305135--; ON: DE94001091
Country of Publication:
United States
Language:
English

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