PREPARATION AND PROPERTIES OF ALUMINUM ANTIMONIDE

Journal Article · Mon Sep 01 04:00:00 EDT 1958 · Journal of the Electrochemical Society (U.S.) Absorbed Electrochem. Technol.

DOI:https://doi.org/10.1149/1.2428915· OSTI ID:4305672

Herczog, A; Haberecht, R R; Middleton, A E

Aluminum and antimony of high purity were prepared by zone refining. and single crystals of AlSb were grown by the Czochralski technique. Effects of various impurities in the starting materials and crucibles on the electrical properties are discussed, and equipment for crystal growing under equilibrium vapor pressure of Sb is described. The resistivity of as-grown-P-type crystals can be decreased substantially by doping with carbon and increased by small quantities of Se and Te. A larger quantity of Te will charge the crystals to Ntype. P-N junctions were made by controlled doping during crystal growing. Effects of various surface treatments on the electrical properties of AlSb are discussed, and some data on point contact and P-N junction diodes are presented. (auth)

• Research Organization: P.R. Mallory & Co. Inc., Indianapolis
• Sponsoring Organization: USDOE
• NSA Number: NSA-12-017223
• OSTI ID: 4305672
• Journal Information: Journal of the Electrochemical Society (U.S.) Absorbed Electrochem. Technol., Journal Name: Journal of the Electrochemical Society (U.S.) Absorbed Electrochem. Technol. Vol. Vol: 105; ISSN JESOA
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

ALUMINUM ALLOYS
ANTIMONY
ANTIMONY ALLOYS
CARBON
CONTROL
CRUCIBLES
CRYSTALS
CZOCHRALSKI METHOD
DIODES
ELECTRIC CONDUCTIVITY
ELECTRIC PROPERTIES
ELECTRICITY
ELECTRON TUBES
EXPANSION
IMPURITIES
INTERMETALLIC COMPOUNDS
LABORATORY EQUIPMENT
LATTICES
MINERALOGY, METALLURGY, AND CERAMICS
MONOCRYSTALS
PREPARATION
PRESSURE
REACTION KINETICS
REFINING
SELENIUM
SEMICONDUCTORS
SURFACES
TELLURIUM
VAPORS
ZONE REFINING
ZONES