THERMAL AND RADIATION ANNEALING OF Ge
Journal Article
·
· Phys. Rev. Letters
It was found that about 50% of the defects produced by 1.10-Mev electron irradiation of Ge at temperatures near 10 deg K can be annealed either by heating to 80 deg K or by irradiating with electrons of energy less than the threshold for damage. Nearly degenerate single crystals of n-type Ge (N/sub 0/ = 7 x 10/ sup 17//cm/sup 3/) were used in the investigation. The Hall coefficient and conductivity were measured as a function of irradiation. (W.D.M.)
- Research Organization:
- Purdue Univ., Lafayette, Ind.
- NSA Number:
- NSA-13-009344
- OSTI ID:
- 4291580
- Journal Information:
- Phys. Rev. Letters, Vol. Vol: 2; Other Information: Orig. Receipt Date: 31-DEC-59
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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