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Title: LOW-TEMPERATURE ANNEALING STUDIES IN Ge

Abstract

>Irradiation at ~ 10 deg K using 1.10-Mev electrons produces very different changes in the electrical properties of a-type Ge as compared to those produced in p-type Ge. In n-type Ge, more carriers are removed per incident electron at 10 deg K than at 78 deg K. However about 50% of the removed carriers are recovered in two stages of annealing, at 34 deg K and 64 deg K, after low temperature irradiation. Irradiation at 0.315 Mev, after a 1.10 Mev irradiation, also produces recovery of about 50% of the carriers removed by the 1.10 Mev irradiation. In p-type Ge, low temperature irradiation is at least 100 times less effective in removing carriers than is the case in n type. Annealing of an irradiated p-type sample to 130 deg K produces no measurable change. It is concluded that the stability of close-vacancy-interstitial pairs against recombination is less in p type than in n-type Ge. A qualituiive argument as to the origin of this difference in stability is presented. (auth)

Authors:
;
Publication Date:
Research Org.:
Purdue Univ., Lafayette, Ind.
Sponsoring Org.:
USDOE
OSTI Identifier:
4223646
NSA Number:
NSA-13-020610
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics (U.S.)
Additional Journal Information:
Journal Volume: Vol: 30; Other Information: Orig. Receipt Date: 31-DEC-59
Country of Publication:
Country unknown/Code not available
Language:
English
Subject:
RADIATION EFFECTS ON MATERIALS; ANNEALING; ATOMS; DEFECTS; ELECTRIC CHARGES; ELECTRONS; GERMANIUM; INTERSTITIAL ATOMS; INTERSTITIALS; LATTICES; LOW TEMPERATURE; RADIATION EFFECTS; RECOVERY; SEMICONDUCTORS; STABILITY; VACANCIES

Citation Formats

MacKay, J W, and Klontz, E E. LOW-TEMPERATURE ANNEALING STUDIES IN Ge. Country unknown/Code not available: N. p., 1959. Web. doi:10.1063/1.1735304.
MacKay, J W, & Klontz, E E. LOW-TEMPERATURE ANNEALING STUDIES IN Ge. Country unknown/Code not available. https://doi.org/10.1063/1.1735304
MacKay, J W, and Klontz, E E. 1959. "LOW-TEMPERATURE ANNEALING STUDIES IN Ge". Country unknown/Code not available. https://doi.org/10.1063/1.1735304.
@article{osti_4223646,
title = {LOW-TEMPERATURE ANNEALING STUDIES IN Ge},
author = {MacKay, J W and Klontz, E E},
abstractNote = {>Irradiation at ~ 10 deg K using 1.10-Mev electrons produces very different changes in the electrical properties of a-type Ge as compared to those produced in p-type Ge. In n-type Ge, more carriers are removed per incident electron at 10 deg K than at 78 deg K. However about 50% of the removed carriers are recovered in two stages of annealing, at 34 deg K and 64 deg K, after low temperature irradiation. Irradiation at 0.315 Mev, after a 1.10 Mev irradiation, also produces recovery of about 50% of the carriers removed by the 1.10 Mev irradiation. In p-type Ge, low temperature irradiation is at least 100 times less effective in removing carriers than is the case in n type. Annealing of an irradiated p-type sample to 130 deg K produces no measurable change. It is concluded that the stability of close-vacancy-interstitial pairs against recombination is less in p type than in n-type Ge. A qualituiive argument as to the origin of this difference in stability is presented. (auth)},
doi = {10.1063/1.1735304},
url = {https://www.osti.gov/biblio/4223646}, journal = {Journal of Applied Physics (U.S.)},
number = ,
volume = Vol: 30,
place = {Country unknown/Code not available},
year = {Sat Aug 01 00:00:00 EDT 1959},
month = {Sat Aug 01 00:00:00 EDT 1959}
}