Anodic vacuum arc deposition of carbon and nitrogen containing carbon films
- Northeastern Univ., Boston, MA (United States)
The anodic vacuum arc was used to deposit thin carbon films (a-C) on Si substrates. The arc produces a partially ionized carbon vapor plasma (less than 20% ionized) and is sustained by a consumable anode. Films with thickness around 0.8--1.7 {micro}m were deposited with a deposition rate of 0.5 {micro}m/min. The a-C films were modified by nitrogen plasma immersion ion implantation (PIII). The effects of nitrogen implantation on the structure and characteristics of the a-C films were investigated by x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and surface energy calculations from the contact angle measurements. XPS C 1s and N 1s spectra suggest a possible formation of covalent carbon-nitrogen bonds. The a-C films Raman spectra have a G band at 1,577 cm{sup {minus}1} and a D band at 1,350 cm{sup {minus}1}, while the implanted films show a broad asymmetric peak around 1,500 cm{sup {minus}1}. Surface energy analysis indicates that the nitrogen implanted films have lower interfacial tension with the silicon substrate.
- OSTI ID:
- 428007
- Report Number(s):
- CONF-960634-; TRN: IM9708%%336
- Resource Relation:
- Conference: 1996 IEEE international conference on plasma science, Boston, MA (United States), 3-5 Jun 1996; Other Information: PBD: 1996; Related Information: Is Part Of IEEE conference record -- Abstracts: 1996 IEEE international conference on plasma science; PB: 324 p.
- Country of Publication:
- United States
- Language:
- English
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