Development of a GaAs Monolithic Surface Acoustic Wave Integrated Circuit

Journal Article · Sun Mar 07 23:00:00 EST 1999 · IEEE Journal of Solid-State Circuits

DOI:https://doi.org/10.1109/4.782084· OSTI ID:4253

Baca, A G ^[1]; Casalnuovo, S C; Drummond, T J; Frye, G C; Heller, E J; Hietala, V M; Klem, J F

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1. Sandia National Laboratories

An oscillator technology using surface acoustic wave delay lines integrated with GaAs MESFET electronics has been developed for GaAs-based integrated microsensor applications. The oscillator consists of a two-port SAW delay line in a feedback loop with a four-stage GaAs MESFET amplifier. Oscillators with frequencies of 470, 350, and 200 MHz have been designed and fabricated. These oscillators are also promising for other RF applications.

• Research Organization: Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 4253
• Report Number(s): SAND99-0554J
• Journal Information: IEEE Journal of Solid-State Circuits, Journal Name: IEEE Journal of Solid-State Circuits
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
AMPLIFIERS
DESIGN
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
INTEGRATED CIRCUITS
OSCILLATORS
RF SYSTEMS
SOUND WAVES