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U.S. Department of Energy
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Acoustic Wave Chemical Microsensors in GaAs

Conference ·
OSTI ID:1261

High sensitivity acoustic wave chemical microsensors are being developed on GaAs substrates. These devices take advantage of the piezoelectric properties of GaAs as well as its mature microelectronics fabrication technology and nascent micromachining technology. The design, fabrication, and response of GaAs SAW chemical microsensors are reported. Functional integrated GaAs SAW oscillators, suitable for chemical sensing, have been produced. The integrated oscillator requires 20 mA at 3 VK, operates at frequencies up to 500 MHz, and occupies approximately 2 mmz. Discrete GaAs sensor components, including IC amplifiers, SAW delay lines, and IC phase comparators have been fabricated and tested. A temperature compensation scheme has been developed that overcomes the large temperature dependence of GaAs acoustic wave devices. Packaging issues related to bonding miniature flow channels directly to the GaAs substrates have been resolved. Micromachining techniques for fabricating FPW and TSM microsensors on thin GaAs membranes are presented and GaAs FPW delay line performance is described. These devices have potentially higher sensitivity than existing GaAs and quartz SAW sensors.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM
Sponsoring Organization:
USDOE Office of Chief Financial Officer (CR)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1261
Report Number(s):
SAND98-1925C; ON: DE00001261
Country of Publication:
United States
Language:
English

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