A 3-dimensional model for inductively coupled plasma etching reactors: Coil generated plasma asymmetries
- Univ. of Illinois, Urbana, IL (United States). Dept. of Electrical and Computer Engineering
Inductively Coupled Plasma (ICP) reactors are being developed as high plasma density, low gas pressure sources for etching and deposition of semiconductor materials. In this paper, the authors describe a 3-dimensional, time dependent model for ICP reactors whose intent is to provide an infrastructure to investigate asymmetries in plasma etching and deposition tools. The model is a 3-dimensional extension of a previously described 2-dimensional simulation called the Hybrid Plasma Equipment Model (HPEM). HPEM-3D consists of an electromagnetics module (EMM), a Boltzmann-electron energy module (BEM) and a fluid-chemical kinetics simulation (FKS). The inductively coupled electromagnetic fields are produced by the EMM. Results from HPEM-3D will be discussed for reactors using etching (Cl{sub 2}, BCl{sub 3}) and non-etching (Ar, Ar/N{sub 2}) gas mixtures, and which have geometrical asymmetries such as wafer clamps and load-lock bays. The authors show how details in the design of the coil, such as the value of the termination capacitance or number of turns, lead to azimuthal variations in the inductive electric field.
- Sponsoring Organization:
- National Science Foundation, Washington, DC (United States); Wisconsin Univ., Madison, WI (United States)
- OSTI ID:
- 423024
- Report Number(s):
- CONF-960634--
- Country of Publication:
- United States
- Language:
- English
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