Monolayer-based lift-off process for patterning chemical vapor deposition copper thin films
- Univ. of Illinois, Urbana-Champaign, IL (United States)
We describe a non-lithographic monolayer based patterning process for deposititng copper thin film microstructures by chemical vapor deposition (CVD). The technique combines the microcontact printing of octadecyltricholorosilane (OTS) monolayers, nonselective copper CVD, and mild (abrasive-free) mechanical polishing to fabricate thin film microstructures on both planar and nonplanar substrates. This technique has been used successfully to deposit copper features with sizes ranging from 5 to 250 {mu}m on a variety of technologically important substrates including indium tin oxide (ITO), titanium nitride (TiN), thermal and plasma grown SiO{sub 2}, AL{sub 2}O{sub 3}, and glass. Patterning is effected via adhesive failure in regions modified by microcontact printing ({mu}CP); nucleation and growth are inhibited in these regions and the copper grains which eventually form on top of the OTS monolayer remain loosely adherent and, thus, are easily removed by mechanical means. The versatility and simplicity of the {mu}CP process as a method for surface modification combined with chemical/physical routes of thin film deposition and patterning suggest a new, defect-tolerant method for fabricating thin film features with micrometer to centimeter dimensions with potential advantages over conventional subtractive patterning processes involving photolithography and chemical etching. 32 refs., 6 figs.
- DOE Contract Number:
- FG02-91ER45439
- OSTI ID:
- 420713
- Journal Information:
- Langmuir, Journal Name: Langmuir Journal Issue: 22 Vol. 12; ISSN 0743-7463; ISSN LANGD5
- Country of Publication:
- United States
- Language:
- English
Similar Records
Micron scale patterning of solution-derived ceramic thin films directed by self-assembled monolayers
Monolayer-mediated deposition of tantalum(V) oxide thin film structures from solution precursors