Adaption of a microwave plasma source for low temperature diamond deposition
- Michigan State Univ., East Lansing, MI (United States). Dept. of Electrical Engineering
This report describes the adaption of a microwave plasma reactor for low temperature diamond deposition. The reactor is of a resonant cavity design. Three approaches have been taken to establish plasma conditions for diamond deposition on substrates which are in the range of 450 C to 550 C. In the first, the substrate is heated only by the plasma and the source is operated at pressures on the order of 10 torr, such that the volumetric power density is sufficiently low to achieve these temperatures. In the second, the plasma pressure and microwave input power were reduced and a substrate heater was used to maintain the desired deposition temperatures. In the third approach, the plasma pressure and microwave power were increased and a substrate cooler was used to keep the substrate temperature in the desired range. Reactor performance and deposition results will be described for the three configurations. For the plasma heated substrate assembly, substrate dimensions were up to 10 cm diameter. For the heated and cooled substrate assemblies, substrate dimensions were up to 7.5 cm diameter. Deposition results on a variety of substrates will be reported including low-temperature substrates such as borosilicate glass.
- OSTI ID:
- 419786
- Report Number(s):
- CONF-960634-; TRN: IM9706%%330
- Resource Relation:
- Conference: 1996 IEEE international conference on plasma science, Boston, MA (United States), 3-5 Jun 1996; Other Information: PBD: 1996; Related Information: Is Part Of IEEE conference record -- Abstracts: 1996 IEEE international conference on plasma science; PB: 324 p.
- Country of Publication:
- United States
- Language:
- English
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