New analytical expressions for dark current calculations of highly doped regions in semiconductor devices

Journal Article · Wed Jan 01 04:00:00 EST 1997 · IEEE Transactions on Electron Devices

DOI:https://doi.org/10.1109/16.554807· OSTI ID:419747

Burgers, A.R. Leguijt, C.; Loelgen, P; Sinke, W C ^[1]

---

1. ECN Renewable Energy, Petten (Netherlands)

The authors studied highly doped quasi-neutral regions of semiconductor devices with position dependent doping concentration in the absence of illumination. An important parameter of a highly doped region is its dark current. To clarify how the doping profile influences the dark current, simple analytical expressions are useful. To this end, they first transformed the transport equations to a simple dimensionless form. This enables one to write already existing analytical expressions in an elegant way. It is demonstrated how, from any analytical dark current expression, a direct counterpart can be derived. Next, they derived a dimensionless form for a nonlinear first-order differential equation for the effective recombination velocity. Starting from the analytical solution of this differential equation for uniformly doped regions and using linearization techniques, they obtained two new simple and accurate expressions for the dark current. The expressions are valid for general doping profiles with different minority carrier transparencies. The exact solution is included between both new approximate solutions. The new expressions are compared with previous approximate solutions.

• Sponsoring Organization: Nederlandse Centrale Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek, The Hague (Netherlands)
• OSTI ID: 419747
• Journal Information: IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 1 Vol. 44; ISSN 0018-9383; ISSN IETDAI
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ANALYTICAL SOLUTION
COMPARATIVE EVALUATIONS
DOPED MATERIALS
ELECTRIC CURRENTS
SEMICONDUCTOR DEVICES