Enhanced low-rate radiation-induced charge trapping at the emitter-base/oxide interface of bipolar devices
Conference
·
OSTI ID:419429
- Sandia National Labs., Albuquerque, NM (United States)
- Arizona Univ., Tucson, AZ (United States). Dept. of Electrical and Computer Engineering
The performance, reliability and radiation hardness of modern bipolar/BiCMOS devices and IC`s is limited by changes in surface recombination velocity and surface potential due to oxide-trap charge in the base oxide and near-midgap interface traps at the emitter- base/oxide interface. This report discusses how this charge trapping is enhanced by low-rate radiation as with implantation and annealing.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 419429
- Report Number(s):
- SAND--96-2092C; CONF-961231--1; ON: DE96014087
- Country of Publication:
- United States
- Language:
- English
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