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DESIGN LIMITATIONS OF A BREAKDOWN DIODE COUPLED TRANSISTOR FLIP FLOP (thesis)

Technical Report ·
DOI:https://doi.org/10.2172/4186828· OSTI ID:4186828

It is well known that the ouiput characteristics of collector coupled transistor flip flops (Eccles Jordan type of circuit) may be stabilized by the addition of clamping diodes to the output circuit. The work presented shows that with a saturating type of flip flop this same clamping action may be accomplished with a single double-base breakdown-diode placed between the collectors of the two transistors. The advantage of such a method of clamping lies in its simplicity, as only three solid state components are necessary; one double-base breakdown-diode and two transistors. The switching time of such a flip flop is comparable with other types of saturated flip flops as the type of clamping has little effect upon switching time. The noise generated by breakdown-diodes ranges from a few m.v. to a few hundred m.v., and is considerably greater than the noise generated by a standard diode. Consequently breakdown-diode clamping should not be used where noise is likely to be a serious problem. (auth)

Research Organization:
California Univ., Berkeley, CA (US). Lawrence Radiation Lab.
DOE Contract Number:
W-7405-ENG-48
NSA Number:
NSA-14-010612
OSTI ID:
4186828
Report Number(s):
UCRL-9046
Country of Publication:
United States
Language:
English

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