ANNEALING OF RADIATION DAMAGE IN SEMICONDUCTING DEVICES (thesis)
Technical Report
·
OSTI ID:4185114
The results and discussion of experiments to determine the effects of radiation upon silicon carbide diodes are presented. An electrical field sweeping effect was discovered. This effect occurred when a voltage was applied to the diode in either forward or back direction. This applied voltage appears to remove all accumulation of radiation effects of a permanent nature to the extent that a constant back current characteristic could be maintained during irradiation from 0 to 1.18 x 10/sup 16/ nvt. After an 1.18 x 10/sup 16/ nvt integrated dose, the diodes tested had a forward to back current ratio of approximately 7400, indicating these devices to be as good as they were at the beginning of the experiment. (auth)
- Research Organization:
- Air Force Inst. of Tech., Wright-Patterson AFB, Ohio
- NSA Number:
- NSA-14-007835
- OSTI ID:
- 4185114
- Report Number(s):
- AD-215601
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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