Highly focused ion beams in integrated circuit testing
Conference
·
OSTI ID:418495
The nuclear microprobe has proven to be a useful tool in radiation testing of integrated circuits. This paper reviews single event upset (SEU) and ion beam induced charge collection (IBICC) imaging techniques, with special attention to damage-dependent effects. Comparisons of IBICC measurements with three-dimensional charge transport simulations of charge collection are then presented for isolated p-channel field effect transistors under conducting and non-conducting bias conditions.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 418495
- Report Number(s):
- SAND--96-2452C; CONF-9609280--2; ON: DE97000751
- Country of Publication:
- United States
- Language:
- English
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