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Title: ION SOURCE

Patent ·
OSTI ID:4184365

The ion source described essentially eliminater the problem of deposits of nonconducting materials forming on parts of the ion source by certain corrosive gases. This problem is met by removing both filament and trap from the ion chamber, spacing them apart and outside the chamber end walls, placing a focusing cylinder about the filament tip to form a thin collimated electron stream, aligning the cylinder, slits in the walls, and trap so that the electron stream does not bombard any part in the source, and heating the trap, which is bombarded by electrons, to a temperature hotter than that in the ion chamber, so that the tendency to build up a deposit caused by electron bombardment is offset by the extra heating supplied only to the trap.

Research Organization:
Originating Research Org. not identified
NSA Number:
NSA-14-015812
Assignee:
U.S. Atomic Energy Commission
Patent Number(s):
US 2920200
OSTI ID:
4184365
Resource Relation:
Other Information: Orig. Receipt Date: 31-DEC-60
Country of Publication:
United States
Language:
English