ON THE SOLUBILITY OF BORON IN SILICON (in Ukrainian)
Journal Article
·
· Dopovidi Akad. Nauk. Uk. R.S.R.
OSTI ID:4180714
The solubility of boron in silicon was investigated by metallographic and x-ray methods. The solubility of boron in silicon was found to increase from 0.50 wt. % (1.2 at.%) at room temperature to 1.6 wt.% (2.9 at.%) at about 1300 deg C. The existence of a eutectic corresponding to 18 at.% of boron and a melting point of about 1370 deg C is shown. A hypothetical form is constructed for the section of the boron-silicon system ranging up to 40 at.% of boron. (auth)
- Research Organization:
- Inst. of Metalloceramics and Special Alloys, Academy of Sciences, Ukrainian SSR
- NSA Number:
- NSA-14-006696
- OSTI ID:
- 4180714
- Journal Information:
- Dopovidi Akad. Nauk. Uk. R.S.R., Journal Name: Dopovidi Akad. Nauk. Uk. R.S.R. Vol. Vol: No. 9
- Country of Publication:
- Country unknown/Code not available
- Language:
- Ukrainian
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