Defect chalcopyrite Cu(In{sub 1{minus}x}Ga{sub x}){sub 3}Se{sub 5} polycrystalline thin-film materials
- National Renewable Energy Lab., Golden, CO (United States)
The defect chalcopyrite material CuIn{sub 3}Se{sub 5} has been identified as playing an essential role in efficient photovoltaic action in CuInSe{sub 2}-based devices; it has been reported to be of n-type conductivity, forming a p-n junction with its p-type counterpart CuInSe{sub 2}. Because the most efficient cells consist of the Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2} quaternary, knowledge of some physical properties of the Ga-containing defect chalcopyrite Cu(In{sub 1{minus}x}Ga{sub x}){sub 3}Se{sub 5} may help us better understand the junction phenomena in such devices. Polycrystalline Cu(In{sub 1{minus}x}Ga{sub x}){sub 3}Se{sub 5} (with 0<1) thin films have been grown on 7059 Corning glass, soda-lime silica glass, n-type (100)Si, and Mo-coated soda-lime glass by coevaporation from elemental sources. In general, optical data show direct optical bandgaps that range from 1.20 eV for x = 0 to {approximately}1.85 eV for x = 1 (this represents {approximately}200 meV higher bandgaps than the Cu(In,Ga)Se{sub 2} counterparts). Micrographs of the thin films show a substantial change in morphology as the Ga content is increased--for identical conditions of growth rate and substrate temperature. X-ray diffraction patterns agree with previously publish data for the ternary case (x = 0), where these materials have been referred to as ordered vacancy compounds. Pole figures confirm a high degree of texturing in the films and a change in preferred orientation as Ga content is increased.
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 417683
- Report Number(s):
- CONF-960401-; ISBN 1-55899-329-0; TRN: IM9705%%56
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Thin films for photovoltaic and related device applications; Ginley, D. [ed.] [National Renewable Energy Lab., Golden, CO (United States)]; Catalano, A. [ed.] [Technology Assessment Group, Boulder, CO (United States)]; Schock, H.W. [ed.] [Univ. Stuttgart (Germany)]; Eberspacher, C. [ed.] [Unisun, Newbury Park, CA (United States)]; Peterson, T.M. [ed.] [Electric Power Research Inst., Palo Alto, CA (United States)]; Wada, Takahiro [ed.] [Matsushita Electric Industries Co., Ltd., Kyoto (Japan)]; PB: 621 p.; Materials Research Society symposium proceedings, Volume 426
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
COPPER SELENIDES
CRYSTAL STRUCTURE
MORPHOLOGY
OPTICAL PROPERTIES
ELECTRICAL PROPERTIES
INDIUM SELENIDES
GALLIUM SELENIDES
SOLAR CELLS
MATERIALS
DEPOSITION
SUBSTRATES
GLASS
SILICON
MOLYBDENUM
CHEMICAL COMPOSITION
STOICHIOMETRY
X-RAY DIFFRACTION
LATTICE PARAMETERS
ABSORPTIVITY
HALL EFFECT
CARRIER DENSITY
EXPERIMENTAL DATA