Defect chalcopyrite Cu(In{sub 1{minus}x}Ga{sub x}){sub 3}Se{sub 5} polycrystalline thin-film materials
Book
·
OSTI ID:417683
- National Renewable Energy Lab., Golden, CO (United States)
The defect chalcopyrite material CuIn{sub 3}Se{sub 5} has been identified as playing an essential role in efficient photovoltaic action in CuInSe{sub 2}-based devices; it has been reported to be of n-type conductivity, forming a p-n junction with its p-type counterpart CuInSe{sub 2}. Because the most efficient cells consist of the Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2} quaternary, knowledge of some physical properties of the Ga-containing defect chalcopyrite Cu(In{sub 1{minus}x}Ga{sub x}){sub 3}Se{sub 5} may help us better understand the junction phenomena in such devices. Polycrystalline Cu(In{sub 1{minus}x}Ga{sub x}){sub 3}Se{sub 5} (with 0
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 417683
- Report Number(s):
- CONF-960401--; ISBN 1-55899-329-0
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:276846
Related Subjects
14 SOLAR ENERGY
36 MATERIALS SCIENCE
ABSORPTIVITY
CARRIER DENSITY
CHEMICAL COMPOSITION
COPPER SELENIDES
CRYSTAL STRUCTURE
DEPOSITION
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
GALLIUM SELENIDES
GLASS
HALL EFFECT
INDIUM SELENIDES
LATTICE PARAMETERS
MATERIALS
MOLYBDENUM
MORPHOLOGY
OPTICAL PROPERTIES
SILICON
SOLAR CELLS
STOICHIOMETRY
SUBSTRATES
X-RAY DIFFRACTION
36 MATERIALS SCIENCE
ABSORPTIVITY
CARRIER DENSITY
CHEMICAL COMPOSITION
COPPER SELENIDES
CRYSTAL STRUCTURE
DEPOSITION
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
GALLIUM SELENIDES
GLASS
HALL EFFECT
INDIUM SELENIDES
LATTICE PARAMETERS
MATERIALS
MOLYBDENUM
MORPHOLOGY
OPTICAL PROPERTIES
SILICON
SOLAR CELLS
STOICHIOMETRY
SUBSTRATES
X-RAY DIFFRACTION