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Defect chalcopyrite Cu(In{sub 1{minus}x}Ga{sub x}){sub 3}Se{sub 5} polycrystalline thin-film materials

Book ·
OSTI ID:417683
; ; ; ; ;  [1]
  1. National Renewable Energy Lab., Golden, CO (United States)
The defect chalcopyrite material CuIn{sub 3}Se{sub 5} has been identified as playing an essential role in efficient photovoltaic action in CuInSe{sub 2}-based devices; it has been reported to be of n-type conductivity, forming a p-n junction with its p-type counterpart CuInSe{sub 2}. Because the most efficient cells consist of the Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2} quaternary, knowledge of some physical properties of the Ga-containing defect chalcopyrite Cu(In{sub 1{minus}x}Ga{sub x}){sub 3}Se{sub 5} may help us better understand the junction phenomena in such devices. Polycrystalline Cu(In{sub 1{minus}x}Ga{sub x}){sub 3}Se{sub 5} (with 0
DOE Contract Number:
AC36-83CH10093
OSTI ID:
417683
Report Number(s):
CONF-960401--; ISBN 1-55899-329-0
Country of Publication:
United States
Language:
English