Bandgap Engineering of Cu(In1-xGax)Se2 Absorber Layers Fabricated using CuInSe2 and CuGaSe2 Targets for One-Step Sputtering Process

Park, Jae -Cheol; Lee, Jeon -Ryang; Al-Jassim, Mowafak; Kim, Tae -Won

doi:10.1364/OME.6.003541

Bandgap Engineering of Cu(In_1-xGax)Se₂ Absorber Layers Fabricated using CuInSe₂ and CuGaSe₂ Targets for One-Step Sputtering Process

Journal Article · Mon Oct 17 00:00:00 EDT 2016 · Optical Materials Express

DOI:https://doi.org/10.1364/OME.6.003541· OSTI ID:1334745

Park, Jae -Cheol ^[1]; Lee, Jeon -Ryang ^[1]; Al-Jassim, Mowafak ^[2]; Kim, Tae -Won ^[1]

Korea Inst. of Industrial Technology, Gwangju (South Korea). Advanced Photoenergy Lab.
National Renewable Energy Lab. (NREL), Golden, CO (United States). National Center for Photovoltaics

Here we have demonstrated that the bandgap of Cu(In_1-xGa_x)Se₂(CIGS) absorber layers was readily controlled by using a one-step sputtering process. CIGS thin-film sample libraries with different Ga/(In + Ga) ratios were synthesized on soda-lime glass at 550 °C using a combinatorial magnetron sputtering system employing CuInSe₂(CIS) and CuGaSe₂(CGS) targets. Energy-dispersive X-ray fluorescence spectrometry (EDS-XRF) confirmed that the CIGS films had different Ga/(In + Ga) ratios, which were varied by the sample configuration on the substrate and ranged from 0.2 to 0.9. X-ray diffraction and Raman spectroscopy revealed that the CIGS films had a pure chalcopyrite phase without any secondary phase such as Cu-Se or ordered vacancy compound (OVC), respectively. Furthermore, we found that the optical bandgap energies of the CIGS films determined by transmittance measurements ranged from 1.07 eV to 1.53 eV as the Ga/(In + Ga) ratio increased from 0.2 to 0.9, demonstrating that the one-step sputtering process using CIS and CGS targets is another simple route to control the bandgap energy of the CIGS absorber layer.

View Accepted Manuscript (DOE)

Research Organization:: NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1334745

Report Number(s):: NREL/JA--5K00-67515

Journal Information:: Optical Materials Express, Journal Name: Optical Materials Express Journal Issue: 11 Vol. 6; ISSN 2159-3930

Publisher:: Optical Society of America (OSA)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited By (2)

One-step RF magnetron sputtering method for preparing Cu(In, Ga)Se2 solar cells Wang, Qintao; Zhao, Zhixing; Li, Haimin Journal of Materials Science: Materials in Electronics, Vol. 29, Issue 14 https://doi.org/10.1007/s10854-018-9274-y	journal	May 2018
Lattice dynamical and elastic properties of mixed quaternary semiconducting alloys CuGa _{1− x} Al _x S ₂ and Ag _x Cu _{1− x} GaS ₂ Kushwaha, A. K.; Vishwakarma, M. K.; Akbudak, S. Materials Research Express, Vol. 6, Issue 2 https://doi.org/10.1088/2053-1591/aaeb6b	journal	November 2018

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Related Subjects

14 SOLAR ENERGY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
absorber layers
bandgap
sputtering
thin films