Bandgap Engineering of Cu(In1-xGax)Se2 Absorber Layers Fabricated using CuInSe2 and CuGaSe2 Targets for One-Step Sputtering Process

Park, Jae -Cheol; Lee, Jeon -Ryang; Al-Jassim, Mowafak; Kim, Tae -Won

doi:10.1364/OME.6.003541

Title: Bandgap Engineering of Cu(In_1-xGax)Se₂ Absorber Layers Fabricated using CuInSe₂ and CuGaSe₂ Targets for One-Step Sputtering Process

Journal Article · Mon Oct 17 00:00:00 EDT 2016 · Optical Materials Express

DOI:https://doi.org/10.1364/OME.6.003541· OSTI ID:1334745

Park, Jae -Cheol ^[1]; Lee, Jeon -Ryang ^[1]; Al-Jassim, Mowafak ^[2]; Kim, Tae -Won ^[1]

Korea Inst. of Industrial Technology, Gwangju (South Korea). Advanced Photoenergy Lab.
National Renewable Energy Lab. (NREL), Golden, CO (United States). National Center for Photovoltaics

Here we have demonstrated that the bandgap of Cu(In_1-xGa_x)Se₂(CIGS) absorber layers was readily controlled by using a one-step sputtering process. CIGS thin-film sample libraries with different Ga/(In + Ga) ratios were synthesized on soda-lime glass at 550 °C using a combinatorial magnetron sputtering system employing CuInSe₂(CIS) and CuGaSe₂(CGS) targets. Energy-dispersive X-ray fluorescence spectrometry (EDS-XRF) confirmed that the CIGS films had different Ga/(In + Ga) ratios, which were varied by the sample configuration on the substrate and ranged from 0.2 to 0.9. X-ray diffraction and Raman spectroscopy revealed that the CIGS films had a pure chalcopyrite phase without any secondary phase such as Cu-Se or ordered vacancy compound (OVC), respectively. Furthermore, we found that the optical bandgap energies of the CIGS films determined by transmittance measurements ranged from 1.07 eV to 1.53 eV as the Ga/(In + Ga) ratio increased from 0.2 to 0.9, demonstrating that the one-step sputtering process using CIS and CGS targets is another simple route to control the bandgap energy of the CIGS absorber layer.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1334745

Report Number(s):: NREL/JA-5K00-67515

Journal Information:: Optical Materials Express, Vol. 6, Issue 11; ISSN 2159-3930

Publisher:: Optical Society of America (OSA)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 17 works

Citation information provided by
Web of Science

References (34)

Characteristics of Cu(In,Ga)Se2 (CIGS) thin films deposited by a direct solution coating process Park, MyoungGuk; Ahn, SeJin; Yun, Jae Ho Journal of Alloys and Compounds, Vol. 513 https://doi.org/10.1016/j.jallcom.2011.09.080	journal	February 2012
Structure, morphology and properties of thinned Cu(In, Ga)Se 2 films and solar cells Han, Anjun; Zhang, Yi; Song, Wei Semiconductor Science and Technology, Vol. 27, Issue 3 https://doi.org/10.1088/0268-1242/27/3/035022	journal	February 2012
Characterisation of Cu(In,Ga)Se2-based thin film solar cells on polyimide Zachmann, H.; Heinker, S.; Braun, A. Thin Solid Films, Vol. 517, Issue 7 https://doi.org/10.1016/j.tsf.2008.10.132	journal	February 2009
CuGaSe2 solar cells using atomic layer deposited Zn(O,S) and (Zn,Mg)O buffer layers Hultqvist, A.; Platzer-Björkman, C.; Pettersson, J. Thin Solid Films, Vol. 517, Issue 7 https://doi.org/10.1016/j.tsf.2008.10.109	journal	February 2009
Effects of substrate temperature on the structural and electrical properties of Cu(In,Ga)Se2 thin films Zhang, Li; He, Qing; Jiang, Wei-Long Solar Energy Materials and Solar Cells, Vol. 93, Issue 1 https://doi.org/10.1016/j.solmat.2008.09.002	journal	January 2009
Ex-situ and in-situ analyses on reaction mechanism of CuInSe2 (CIS) formed by selenization of sputter deposited CuIn precursor with Se vapor Moon, Dong Gwon; Ahn, SeJin; Yun, Jae Ho Solar Energy Materials and Solar Cells, Vol. 95, Issue 10 https://doi.org/10.1016/j.solmat.2011.05.028	journal	October 2011
Raman spectroscopy of CuIn1−xGaxSe2 for in-situ monitoring of the composition ratio Choi, In-Hwan Thin Solid Films, Vol. 519, Issue 13 https://doi.org/10.1016/j.tsf.2011.02.058	journal	April 2011
The limiting efficiency of band gap graded solar cells Rafat, N. Solar Energy Materials and Solar Cells, Vol. 55, Issue 4 https://doi.org/10.1016/S0927-0248(98)00108-1	journal	September 1998
Influence of indium/gallium gradients on the Cu(In,Ga)Se 2 devices deposited by the co-evaporation without recrystallisation Drobiazg, Tomasz; Arzel, Ludovic; Dönmez, Adem Thin Solid Films, Vol. 582 https://doi.org/10.1016/j.tsf.2014.09.069	journal	May 2015
Differential in-depth characterization of co-evaporated Cu(In,Ga)Se2 thin films for solar cell applications Klinkert, Torben; Jubault, Marie; Donsanti, Frédérique Thin Solid Films, Vol. 558 https://doi.org/10.1016/j.tsf.2014.02.071	journal	May 2014
Another route to fabricate single-phase chalcogenides by post-selenization of Cu–In–Ga precursors sputter deposited from a single ternary target Chen, G. S.; Yang, J. C.; Chan, Y. C. Solar Energy Materials and Solar Cells, Vol. 93, Issue 8 https://doi.org/10.1016/j.solmat.2009.02.014	journal	August 2009
A study on composition, structure and optical properties of copper-poor CIGS thin film deposited by sequential sputtering of CuGa/In and In/(CuGa+In) precursors Park, Seong-Un; Sharma, Rahul; Ashok, K. Journal of Crystal Growth, Vol. 359 https://doi.org/10.1016/j.jcrysgro.2012.08.013	journal	November 2012
Post-selenization of stacked precursor layers for CIGS Baji, Zs.; Lábadi, Z.; Molnár, Gy. Vacuum, Vol. 92 https://doi.org/10.1016/j.vacuum.2012.11.012	journal	June 2013
Preparation of CuInGaSe thin films by sputtering and selenization process Song, H.; Kim, S.; Kim, H. Solar Energy Materials and Solar Cells, Vol. 75, Issue 1-2 https://doi.org/10.1016/S0927-0248(02)00125-3	journal	January 2003
The effects of the morphology on the CIGS thin films prepared by CuInGa single precursor Su, Cherng-Yuh; Ho, Wei-Hao; Lin, Hsuan-Ching Solar Energy Materials and Solar Cells, Vol. 95, Issue 1 https://doi.org/10.1016/j.solmat.2010.04.072	journal	January 2011
Structural analysis of Cu(In,Ga)Se2 films fabricated by using sputtering and post-selenization Pak, SeJun; Kim, JunHo Current Applied Physics, Vol. 13, Issue 6 https://doi.org/10.1016/j.cap.2013.02.008	journal	August 2013
Fabrication of graded band-gap Cu(InGa)Se2 thin-film mini-modules with a Zn(O,S,OH)x buffer layer Kushiya, Katsumi; Tachiyuki, Muneyori; Kase, Takahisa Solar Energy Materials and Solar Cells, Vol. 49, Issue 1-4 https://doi.org/10.1016/S0927-0248(97)00204-3	journal	December 1997
Role of incorporated sulfur into the surface of Cu(InGa)Se2 thin-film absorber Nagoya, Yoshinori; Kushiya, Katsumi; Tachiyuki, Muneyori Solar Energy Materials and Solar Cells, Vol. 67, Issue 1-4 https://doi.org/10.1016/S0927-0248(00)00288-9	journal	March 2001
A promising sputtering route for one-step fabrication of chalcopyrite phase Cu(In,Ga)Se2 absorbers without extra Se supply Chen, Chia-Hsiang; Shih, Wen-Chieh; Chien, Chih-Yu Solar Energy Materials and Solar Cells, Vol. 103 https://doi.org/10.1016/j.solmat.2012.04.008	journal	August 2012
Cu(In,Ga)Se2 thin films and devices sputtered from a single target without additional selenization Frantz, J. A.; Bekele, R. Y.; Nguyen, V. Q. Thin Solid Films, Vol. 519, Issue 22 https://doi.org/10.1016/j.tsf.2011.06.014	journal	September 2011
Fabrication of Cu(In, Ga)Se2 thin films by sputtering from a single quaternary chalcogenide target Shi, J. H.; Li, Z. Q.; Zhang, D. W. Progress in Photovoltaics: Research and Applications, Vol. 19, Issue 2 https://doi.org/10.1002/pip.1001	journal	May 2010
One-step synthesis of Cu(In,Ga)Se2 absorber layers by magnetron sputtering from a single quaternary target Zhou, A. J.; Mei, D.; Kong, X. G. Thin Solid Films, Vol. 520, Issue 19 https://doi.org/10.1016/j.tsf.2012.05.035	journal	July 2012
Effects of Ga contents on properties of CIGS thin films and solar cells fabricated by co-evaporation technique Jung, Sunghun; Ahn, SeJin; Yun, Jae Ho Current Applied Physics, Vol. 10, Issue 4 https://doi.org/10.1016/j.cap.2009.11.082	journal	July 2010
Preparation of CuGaSe2 absorber layers for thin film solar cells by annealing of efficiently electrodeposited Cu–Ga precursor layers from ionic liquids Steichen, M.; Larsen, J.; Gütay, L. Thin Solid Films, Vol. 519, Issue 21 https://doi.org/10.1016/j.tsf.2011.01.135	journal	August 2011
Characterization of Cu(In,Ga)Se2 films by Raman scattering Roy, S.; Guha, P.; Kundu, S. N. Materials Chemistry and Physics, Vol. 73, Issue 1 https://doi.org/10.1016/S0254-0584(01)00345-5	journal	January 2002
Raman Spectra of CuGa _x In _{1- x} Se ₂ Tanino, H.; Deai, H.; Nakanishi, Hisayuki Japanese Journal of Applied Physics, Vol. 32, Issue S3 https://doi.org/10.7567/JJAPS.32S3.436	journal	January 1993
Se interlayer in CIGS absorption layer for solar cell devices Lee, Seung-Kyu; Sim, Jae-Kwan; Kissinger, N. J. Suthan Journal of Alloys and Compounds, Vol. 633 https://doi.org/10.1016/j.jallcom.2015.01.126	journal	June 2015
Band gap engineering of tandem structured CIGS compound absorption layer fabricated by sputtering and selenization Kang, San; Sharma, Rahul; Sim, Jae-Kwan Journal of Alloys and Compounds, Vol. 563 https://doi.org/10.1016/j.jallcom.2013.02.112	journal	June 2013
Quasi-Fermi level splitting and identification of recombination losses from room temperature luminescence in Cu(In1−xGax)Se2 thin films versus optical band gap Bauer, G. H.; Brüggemann, R.; Tardon, S. Thin Solid Films, Vol. 480-481 https://doi.org/10.1016/j.tsf.2004.11.061	journal	June 2005
Properties of high-efficiency CuInGaSe2 thin film solar cells Ramanathan, K.; Teeter, G.; Keane, J. C. Thin Solid Films, Vol. 480-481 https://doi.org/10.1016/j.tsf.2004.11.050	journal	June 2005
Structural and optical properties of homogeneous Cu(In,Ga)Se ₂ thin films prepared by thermal reaction of InSe/Cu/GaSe alloys with elemental Se vapour Dejene, F. B.; Alberts, V. Journal of Physics D: Applied Physics, Vol. 38, Issue 1 https://doi.org/10.1088/0022-3727/38/1/005	journal	December 2004
The effects of pulse repetition rate on the structural, optical, and electrical properties of CIGS films grown by pulsed laser deposition Chen, Chia-Chuan; Qi, Xiaoding; Chang, Wei-Che Applied Surface Science, Vol. 351 https://doi.org/10.1016/j.apsusc.2015.06.002	journal	October 2015
Effect of Cu content on the photovoltaic properties of wide bandgap CIGS thin-film solar cells prepared by single-stage process Saifullah, Muhammad; Moon, Ji Hyun; Ahn, SeJin Current Applied Physics, Vol. 16, Issue 11 https://doi.org/10.1016/j.cap.2016.08.019	journal	November 2016
CIGS absorbing layers prepared by RF magnetron sputtering from a single quaternary target Zhang, H. X.; Hong, R. J. Ceramics International, Vol. 42, Issue 13 https://doi.org/10.1016/j.ceramint.2016.06.067	journal	October 2016

Cited By (2)

One-step RF magnetron sputtering method for preparing Cu(In, Ga)Se2 solar cells Wang, Qintao; Zhao, Zhixing; Li, Haimin Journal of Materials Science: Materials in Electronics, Vol. 29, Issue 14 https://doi.org/10.1007/s10854-018-9274-y	journal	May 2018
Lattice dynamical and elastic properties of mixed quaternary semiconducting alloys CuGa _{1− x} Al _x S ₂ and Ag _x Cu _{1− x} GaS ₂ Kushwaha, A. K.; Vishwakarma, M. K.; Akbudak, S. Materials Research Express, Vol. 6, Issue 2 https://doi.org/10.1088/2053-1591/aaeb6b	journal	November 2018

Similar Records

Effects of Ga addition to CuInSe{sub 2} on its electronic, structural, and defect properties

Journal Article · Mon Jun 01 00:00:00 EDT 1998 · Applied Physics Letters · OSTI ID:1334745

Wei, S; Zhang, S B; Zunger, A

Assessing the roles of Cu- and Ag-deficient layers in chalcopyrite-based solar cells through first principles calculations

Journal Article · Mon Feb 10 00:00:00 EST 2020 · Journal of Applied Physics · OSTI ID:1334745

Sharan, Abhishek; Sabino, Fernando P.; Janotti, Anderson; +3 more

Optimization of vertical and lateral distances between target and substrate in deposition process of CuGaSe₂ thin films using one-step sputtering

Journal Article · Wed Feb 01 00:00:00 EST 2017 · Materials Express · OSTI ID:1334745

Park, Jae -Cheol; Al-Jassim, Mowafak; Kim, Tae -Won

Related Subjects

14 SOLAR ENERGY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
bandgap
absorber layers
sputtering
thin films

Title: Bandgap Engineering of Cu(In1-xGax)Se2 Absorber Layers Fabricated using CuInSe2 and CuGaSe2 Targets for One-Step Sputtering Process

Citation Formats

References (34)

Cited By (2)

Similar Records

Related Subjects

Title: Bandgap Engineering of Cu(In_1-xGax)Se₂ Absorber Layers Fabricated using CuInSe₂ and CuGaSe₂ Targets for One-Step Sputtering Process