Inhibition of metal induced crystallization in the system Ag/ZnO/a-Si:H
- Technion-Israel Inst. of Tech., Haifa (Israel). Solid State Inst.
- Forschungszentrum Juelich (Germany). Inst. fuer Schicht- und Ionentechnik
A systematic investigation has been made on the barrier properties of ZnO layer between n-doped a-Si:H and Ag metallization films in the structures (001)Si/SiO{sub 2}/Ag/ZnO/a-Si:H:P and (001)Si/SiO{sub 2}/a-Si:H:P/ZnO/Ag. Plasma assisted CVD deposition was used to produce a Si:H (2,500 {angstrom} thick) highly P-doped films over thermally oxidized Si-wafers at 190 and 270 C. Transparent conductive ZnO:Al layers, 1,000{angstrom} and 1 {micro}m thickness, and Ag films (1,000{angstrom} thick) were deposited by sputtering. The polycrystalline ZnO layers were textured along the <0001> axis in the as-deposited state. The structures were annealed in vacuum in the temperature range from 300 to 700 C for 1/4 to 16h. X-ray diffraction and transmission electron microscopy studies demonstrated the a-Si:H:P stability against crystallization under ZnO buffer protection up to 700 C (when free a-Si crystallizes itself). The (111) peak position of the Ag reflection was used to show that while the Ag was always strained, the strain was partially relaxed when in contact with the 0.1{micro}m ZnO film, it developed additional strain when in contact with the 1{micro}m ZnO film.
- OSTI ID:
- 417650
- Report Number(s):
- CONF-960401--; ISBN 1-55899-329-0
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
ALUMINIUM
AUGER ELECTRON SPECTROSCOPY
CHEMICAL VAPOR DEPOSITION
COMPOSITE MATERIALS
CRYSTALLIZATION
DOPED MATERIALS
EXPERIMENTAL DATA
FABRICATION
HYDROGEN ADDITIONS
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
PHOSPHORUS
PHOTOVOLTAIC CELLS
SILICON
SILICON OXIDES
SILVER
SPUTTERING
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ZINC OXIDES