The potential of ScN-GaN heterojunctions and alloys for wide bandgap semiconductor devices and displays

Conference · Tue Dec 31 00:00:00 EST 1996

OSTI ID:417637

Dismukes, J P ^[1]; Moustakas, T D ^[2]

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1. Exxon Research and Engineering Co., Annandale, NJ (United States)
2. Boston Univ., MA (United States). Dept. of ECS Engineering

The wide bandgap semiconductor GaN and its solid solution alloys with InN and AlN are of increasing interest for a number of optoelectronic applications. Current, the potential for combining GaN with ScN, a rock salt structure semiconductor with an optical bandgap of {approximately} 2.1 eV, has not been well recognized. To explore the idea, in this conceptual paper the authors first critically review the existing knowledge on ScN, including the controversies regarding stoichiometry/dopability and whether it is a semiconductor or a semimetal. They then propose three concepts for enhancing the potential of GaN in optoelectronic applications. The first is to combine GAN with ScN to form lattice matched GaN-ScN heterojunctions, the second is to form GaN-ScN solid solution alloys covering the range of energy gaps from 2.1--3.4 eV, and the third is to introduce rare earth luminescent centers into heterojunctions and alloys. 51 refs., 6 figs., 2 tabs.

• OSTI ID: 417637
• Report Number(s): CONF-960502-; ISBN 1-56677-163-3; TRN: IM9705%%10
• Resource Relation: Conference: 189. meeting of the Electrochemical Society (ECS), Los Angeles, CA (United States), 5-10 May 1996; Other Information: PBD: 1996; Related Information: Is Part Of III-V nitride materials and processes; Moustakas, T.D. [ed.] [Boston Univ., MA (United States)]; Dismukes, J.P. [ed.] [Univ. of Toledo, OH (United States)]; Pearton, S.J. [ed.] [Univ. of Florida, Gainesville, FL (United States)]; PB: 241 p.; Electrochemical Society Proceedings Volume 96-11
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
SCANDIUM NITRIDES
SYNTHESIS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
GALLIUM NITRIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
STOICHIOMETRY
ABSORPTIVITY
HALL EFFECT
PHOTOELECTRON SPECTROSCOPY
BAND THEORY
INTERFACES
SOLID SOLUTIONS
LATTICE PARAMETERS