Porous silicon gettering

Conference · Wed May 01 00:00:00 EDT 1996

DOI:https://doi.org/10.1109/PVSC.1996.564043· OSTI ID:416137

Tsuo, Y S; Menna, P; Pitts, J R ^[1]

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1. National Renewable Energy Lab., Golden, CO (United States); and others

The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

• Research Organization: National Renewable Energy Lab., Golden, CO (United States)
• DOE Contract Number: AC36-83CH10093
• OSTI ID: 416137
• Report Number(s): NREL/TP--410-21091; CONF-960513--; ON: DE96007880
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
FABRICATION
GETTERING
POROUS MATERIALS
SILICON SOLAR CELLS