Porous silicon gettering

Conference · Sun Sep 01 00:00:00 EDT 1996

OSTI ID:276872

Tsuo, Y S; Pitts, J R; Jantzen, K R; Asher, S; Al-Jassim, M; Ciszek, T F ^[1]; Menna, P ^[2]

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1. National Renewable Energy Lab., Golden, CO (United States)
2. ENEA, Portici (Italy)

The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. They used metallurgical-grade Si (MG-Si) prepared by directional solidification casting as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

• DOE Contract Number: AC36-83CH10093
• OSTI ID: 276872
• Report Number(s): CONF-960513--
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
ETCHING
FABRICATION
GETTERING
HYDROFLUORIC ACID
IMPURITIES
NITRIC ACID
SILICON
SILICON SOLAR CELLS