High resolution I{sub DDQ} characterization and testing -- Practical issues

Conference · Sat Nov 30 23:00:00 EST 1996

OSTI ID:414408

Righter, A W; Soden, J M; Beegle, R W

I{sub DDQ} testing has become an important contributor to quality improvement of CMOS ICs. This paper describes high resolution I{sub DDQ} characterization and testing (from the sub-nA to {micro}A level) and outlines test hardware and software issues. The physical basis of I{sub DDQ} is discussed. Methods for statistical analysis of I{sub DDQ} data are examined, as interpretation of the data is often as important as the measurement itself. Applications of these methods to set reasonable test limits for detecting defective product are demonstrated.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 414408
• Report Number(s): SAND--96-2462C; CONF-9610208--1; ON: DE97000741
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
DATA ANALYSIS
DEFECTS
ELECTRIC CURRENTS
ELECTRICAL TESTING
INTEGRATED CIRCUITS
LEAKAGE CURRENT
TEMPERATURE DEPENDENCE