EFFECTS OF PROTON IRRADIATION ON THE PROPERTIES OF SILICON (in French)
The diffusion enhancement is studied in high-temperature proton- irradiated silicon crystals, revealed by the displacement of an n-p junction. The defects created by irradiation are studied. The whole thickness of the crystal may be perturbed. The perturbation disappears after etching away of the region where the defects are created, 10 mu from the surface (depth of penetration of the protons). (auth)
- Research Organization:
- Laboratoire de Mineralogie-Cristallographie, Sorbonne, France
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-18-002320
- OSTI ID:
- 4142213
- Journal Information:
- J. Phys., Journal Name: J. Phys. Vol. Vol: 24
- Country of Publication:
- Country unknown/Code not available
- Language:
- French
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