Nature of defect clusters in electron-irradiated copper

Conference · Wed Jan 01 04:00:00 EST 1975

OSTI ID:4139749

Ohr, S M

An electron microscope study has been made of the clustering of point defects in electron-irradiated copper in the range of temperatures between Stage III and Stage V. The samples used were single crystals of copper irradiated at 4$sup 0$K with 3 MeV electrons to a dose of 1.4 x 10$sup 19$ electrons/cm$sup 2$. In all of the samples examined the defect clusters were in the form of dislocation loops, mostly less than 100 A in diameter. In samples warmed to room temperature, i.e. slightly above Stage III, the analysis of black-white contrast showed that the loops present were entirely of the interstitial type. In samples annealed at 90 and 150$sup 0$C, the defects were predominantly loops of interstitial type, but approximately 10 percent of the loops were of vacancy type. At 250$sup 0$C, the fraction of the loops of vacancy type increased to about 40 percent but the total loop density decreased markedly. The evidence seems to indicate that in Stage III vacancies do not cluster into sizes large enough to be visible in the electron microscope. (auth)

• Research Organization: Oak Ridge National Lab., Tenn. (USA)
• NSA Number: NSA-33-012653
• OSTI ID: 4139749
• Report Number(s): CONF-751006--22
• Country of Publication: United States
• Language: English

Related Subjects

*COPPER-- PHYSICAL RADIATION EFFECTS
360106* --Materials--Metals & Alloys--Radiation Effects
ANNEALING
DISLOCATIONS
ELECTRON BEAMS
ELECTRON MICROSCOPY
INTERSTITIALS
MEDIUM TEMPERATURE
MEV RANGE 01-10
N50240* --Metals
Ceramics
& Other Materials--Metals & Alloys--Radiation Effects
POINT DEFECTS
ULTRALOW TEMPERATURE
VACANCIES