PbSnTe-PbTe heterojunction laser emitting at lambda=10 $mu$
Journal Article
·
· Sov. J. Quant. Electron. (Engl. Transl.), v. 5, no. 9, pp. 1137-1139
OSTI ID:4128372
An n-PbTe-p-Pb$sub 1$/sub -//subx/Sn/subx/Te heterojunction laser was fabricated by epitaxial growth of PbTe from the vapor phase on a Pb$sub 0$$.$$sub 83$Sn$sub 0$$.$$sub 17$Te substrate. Stimulated emission of the TE modes was obtained at wavelengths of 10.2 $mu$ at 77degreeK and 12.2 $mu$ at 33degreeK. Continuous stimulated emission was obtained at liquid helium temperatures. (AIP)
- Research Organization:
- Originating Research Org. not identified
- NSA Number:
- NSA-33-016979
- OSTI ID:
- 4128372
- Journal Information:
- Sov. J. Quant. Electron. (Engl. Transl.), v. 5, no. 9, pp. 1137-1139, Journal Name: Sov. J. Quant. Electron. (Engl. Transl.), v. 5, no. 9, pp. 1137-1139; ISSN SJQEA
- Country of Publication:
- United States
- Language:
- English
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