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DETERMINATION OF ACTIVATED IMPURITIES IN SEMICONDUCTOR-GRADE SILICON BY $gamma$-SPECTROGRAPHY (in Rumanian)

Journal Article · · Acad. rep. populare Romine, Inst. fiz., atomica si Inst. fiz. Studii cercetari fiz.
OSTI ID:4126164
For detecting the short half-life isotopes remaining in chemically pure silicon and in specially remelted samples. the specimens were irradiated for 4.5 hr in the thermal neutron flux of 1.5 x 10/sup 11/ neutron/cm/sup 2//sec in the thermal column of the Institute-s reactor. The activated impurity elements were determined by means of a NaI(Tl) crystal the specimens were irradiated for 4.5 hr in the thermal neutron flux of 1.5 x l0/sup 11/ neutron/cm/sup 2//sec in the thermal column of the Institute's reactor. The activated impurity elements were determined by means of a NaI(Tl) crystal scintillation gamma -spectrograph. starting the tests within 2 hr after the end of the irradiation. No radiochemical separations were performed and no control specimens were used. It was found that antimony, copper, and strontium were present in concentrations of 5.8 x l0/sup -4/, 1.8 x 10/sup -4/, and l.9 x 10/sup -3/%, respectively; the concentration of these elements in the remelted samples was somewhat reduced. The data are subject to an error of about 25 to 35%, caused by the uncertainty of the exact values of the total flux and of the activation cross sections. (TTT)
Research Organization:
Originating Research Org. not identified
NSA Number:
NSA-15-000145
OSTI ID:
4126164
Journal Information:
Acad. rep. populare Romine, Inst. fiz., atomica si Inst. fiz. Studii cercetari fiz., Journal Name: Acad. rep. populare Romine, Inst. fiz., atomica si Inst. fiz. Studii cercetari fiz. Vol. Vol: 11
Country of Publication:
Country unknown/Code not available
Language:
Rumanian