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Electrical resistivity of beryllium

Journal Article · · J. Appl. Phys., v. 46, no. 11, pp. 4742-4746
DOI:https://doi.org/10.1063/1.321550· OSTI ID:4124250
Measurements have been made of the electrical resistivity of two single crystals of beryllium parallel and perpendicular to the hexagonal c axis, respectively, between 4 and 800$sup 0$K. The resistance ratios were 10.0 and 15.5 for the parallel and perpendicular directions, respectively. The anisotropy of the temperature-dependent part of the resistivity was about 35% (rho/sub i// sub parallel/ being higher) at room temperature in contrast to 12% found by Gruneisen and Erfling. The anisotropy was approximately constant in temperature above 273$sup 0$K and decreased rapidly below. The Bloch-Gruneisen equation was fit to the data. The characteristic temperatures were theta/sub R/=1246 +- 1 and 1202 +- 1$sup 0$K for the parallel and perpendicular directions, respectively. (AIP)
Research Organization:
Naval Surface Weapons Center, White Oak Laboratory, Silver Spring, Maryland 20910
Sponsoring Organization:
USDOE
NSA Number:
NSA-33-009864
OSTI ID:
4124250
Journal Information:
J. Appl. Phys., v. 46, no. 11, pp. 4742-4746, Journal Name: J. Appl. Phys., v. 46, no. 11, pp. 4742-4746; ISSN JAPIA
Country of Publication:
United States
Language:
English

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