THE OXIDATION AND CORROSION OF ZIRCONIUM AND ITS ALLOYS. V. MECHANISM OF OXIDE FILM GROWTH AND BREAKDOWN ON ZIRCONIUM AND ZIRCALOY-2

Journal Article · Sat Dec 31 23:00:00 EST 1960 · Journal of the Electrochemical Society (U.S.) Absorbed Electrochem. Technol.

DOI:https://doi.org/10.1149/1.2428005· OSTI ID:4101696

Cox, B

Mechanisms for the film growth and breakdown on zircorium and Zircaloy-2 are discussed. Oxidation experiments were carried out on zirconium and Zircaloy- 2 specimens at 300 ts C in 1-atm steam or in aqueous solutions. From the data, the following mechanism for oxide film growth and breakdown is proposed: The growth of the thin interference color film was found to obey a logarithmic growth law and probably is an example of Uhlig's thin film growth law as applied to metal oxidation. After the oxide film darkens and the interference colors disappear, the distribution of the inhomogeneous regions in the film due to impurities or alloying elements in the metal determines the subsequent behavior of the material. On this basis, the early failure of arc-melted zirconium and the breakaway of Zircaloy-2 below 400 ts C are explained. (D.L.C.)

• Research Organization: Atomic Energy Research Establishment, Harwell, Berks, England
• Sponsoring Organization: USDOE
• NSA Number: NSA-15-009373
• OSTI ID: 4101696
• Journal Information: Journal of the Electrochemical Society (U.S.) Absorbed Electrochem. Technol., Journal Name: Journal of the Electrochemical Society (U.S.) Absorbed Electrochem. Technol. Vol. Vol: 108; ISSN JESOA
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

BREAKDOWN
COLOR
CORROSION
ELECTRIC ARCS
FILMS
GROWTH
INTERFERENCE
INTERFERING ELEMENTS
MELTING
METALS, CERAMICS, AND OTHER MATERIALS
OXIDATION
OXIDES
SAMPLING
SOLUTIONS
SPECTRA
STEAM
WATER
ZIRCALOY
ZIRCONIUM